DocumentCode
2323632
Title
Strong luminescence due to localized excitons in CdTe/ZnSe fractional monolayer
Author
Takai, Toshiaki ; Chang, Jiho ; Godo, Kenji ; Goto, Takenari ; Yao, Takafumi
Author_Institution
IMR, Tohoku Univ., Sendai, Japan
fYear
2002
fDate
15-20 Sept. 2002
Firstpage
387
Lastpage
388
Abstract
Although the application of semiconductor quantum dots to light emitters has been expected, only a few successful achievements have been reported mainly due to the low luminescence efficiency. This paper will report on the strong luminescence of CdTe/ZnSe fractional-monolayer (FM) heterostructures. Various optical-spectroscopic methods are used to investigate the origin of the luminescence in this structure.
Keywords
II-VI semiconductors; atomic layer epitaxial growth; cadmium compounds; excitons; localised states; monolayers; photoluminescence; zinc compounds; 2.3 to 2.4 eV; 230 to 270 C; 280 C; CdTe-ZnSe; CdTe/ZnSe fractional monolayer structures; localized excitons; luminescence; Atom optics; Atomic layer deposition; Excitons; Light emitting diodes; Luminescence; Photoluminescence; Quantum dots; Stimulated emission; Temperature dependence; Zinc compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7581-5
Type
conf
DOI
10.1109/MBE.2002.1037922
Filename
1037922
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