Title :
Structural and transport properties of Mn /spl delta/-doped GaAs layers
Author :
Nazmul, Ahsan M. ; Sugahara, S. ; Tanaka, M.
Abstract :
Delta(/spl delta/)-doping of magnetic ions in III-V semiconductors allows locally high concentration of magnetic moments, which can lead to higher ferromagnetic transition temperature as is expected in III-V-based random-alloy magnetic semiconductors. We have recently found that a Mn /spl delta/-doped GaAs layer only with 0.3 ML Mn concentration showed ferromagnetic ordering when selective p-type doping was introduced. Curie temperature T/sub C/ was found to be as high as 172 K, far above T/sub C/ of random-alloy magnetic semiconductors (e.g. 110 K for GaMnAs. We investigate MBE growth, structural and transport properties of Mn /spl delta/-doped GaAs and its heterostructures.
Keywords :
Curie temperature; III-V semiconductors; gallium arsenide; manganese; molecular beam epitaxial growth; reflection high energy electron diffraction; secondary ion mass spectra; semiconductor doping; semiconductor epitaxial layers; transmission electron microscopy; /spl delta/-doping; Curie temperature; GaAs:Mn; III-V semiconductors; III-V-based random-alloy magnetic semiconductors; Mn /spl delta/-doped GaAs layers; ferromagnetic transition temperature; heterostructures; magnetic moments; molecular beam epitaxial growth; structural properties; transport properties; Gallium arsenide; Lattices; Lead compounds; Magnetic hysteresis; Magnetic moments; Magnetic properties; Magnetic semiconductors; Mass spectroscopy; Semiconductor device doping; Temperature;
Conference_Titel :
Molecular Beam Epitaxy, 2002 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7581-5
DOI :
10.1109/MBE.2002.1037937
