MBE growth of GaMnN diluted magnetic semiconductors and its magnetic properties

Since the discovery of carrier-induced ferromagnetism in InMnAs and GaMnAs, diluted magnetic semiconductors (DMS) have been of much interest from the industrial viewpoint because of their potential application to new classes of devices based on spin-polarized transport or spin injection into semiconductors. However the Curie temperature Tc of GaMnAs (110 K) is relatively low and from the practical consideration it is desirable to find material with higher values. Recent theoretical prediction showed the Mn-doped GaN exhibits a Tc above room temperature. Very recently, several groups have reported the growth and magnetic properties of GaMnN films. But their results are quite different, and the origin of the magnetism is still controversial.