Title :
On the use of bismuth in quantum wells
Author :
Dauscher, A. ; Lenoir, B. ; Boffoué, O. ; Devaux, X. ; Martin-Lopez, R. ; Scherrer, H.
Author_Institution :
Lab. de Phys. des Mater., Ecole des Mines, Nancy, France
Abstract :
A rapid survey of some theoretical considerations concerning the use of multiple quantum well structures (MQWS) in thermoelectricity is given as well as why bismuth can be a prospective material for the development of a new class of thermoelectric systems. Problems arising from Bi film synthesis are discussed, in relation with the preparation of Bi-based MQWS. Some experimental results are reported on pulsed laser deposited Bi films prepared in our laboratory
Keywords :
bismuth; pulsed laser deposition; semiconductor quantum wells; semimetallic thin films; thermoelectricity; Bi; Bi film; MQW; multiple quantum well structures; pulsed laser deposit; survey; synthesis; thermoelectric systems; thermoelectricity; Bismuth; Conducting materials; Optical films; Optical materials; Pulsed laser deposition; Quantum mechanics; Quantum well devices; Superlattices; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667177
