Wave reflection from semiconductor half-space based on charge transport model

The field solution in a semiconductor half-space material based on charge transport model is presented to obtain the reflection coefficients for parallel (H-polarization) and perpendicular (E-polarization). The field solution in a semiconductor incorporates the full set of Maxwellpsilas equations and the equation of motion of the charge carriers based on a drift diffusion model. Two sets of differential equations that describe the field distribution and the charge carrier densities in the semiconductor have been obtained. One set represents the static parts and another represents the dynamic parts. The last set has been solved for unbiased n-type semiconductor half-space, when the incident field employed is either H-polarization or E-polarization. The resultant solution form was used to solve for the plane wave interaction with the charge carriers at a dielectric-semiconductor interfaces. The interaction of the fields and the charge carriers in the semiconductor causes a charge accumulation on the semiconductor surface. The charge accumulation at the surface causes an increase of the reflection coefficient. The paper showed that the increase in the reflection coefficient for H-polarization is due to the normal component of the electric field.