Title :
Thermoelectric properties of multilayered p-type SiGe thin films
Author :
Yammamoto, A. ; Kato, H. ; Kuwashiro, S. ; Takimoto, M. ; Ohta, T. ; Miki, K. ; Sakamoto, K. ; Matsui, T. ; Kamisako, K.
Author_Institution :
Electrotech. Lab., Japan
Abstract :
We fabricated thin films with SiGe/Si multilayered structure by using MBE and evaluated their low temperature transport properties in detail. Boron-doped Si80Ge20 wells separated with 500 A Si barrier layers were formed on highly resistive Si(100) substrate. Measurements of resistivity and Seebeck coefficient clarify that the layered structure has an increasing power factor, α2 /ρ, with decreasing well width for temperatures below 300 K
Keywords :
Ge-Si alloys; Seebeck effect; boron; electrical resistivity; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; semiconductor quantum wells; semiconductor superlattices; silicon; thermoelectricity; 500 A; MBE; Seebeck coefficient; Si; Si barrier layers; Si80Ge20:B wells; Si80Ge20:B/Si; SiGe:B-Si; highly resistive Si(100) substrate; low temperature transport properties; multilayered structure; power factor; resistivity; thermoelectric properties; thin films; well width dependence; Conductivity; Germanium silicon alloys; Molecular beam epitaxial growth; Power measurement; Reactive power; Semiconductor thin films; Silicon germanium; Temperature; Thermoelectricity; Transistors;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667179
