Title :
An analytical model for threshold voltage of FinFETs
Author :
Afzal, B. ; Rostami, M. ; Samaadi, M. ; Afzali-Kusha, A.
Author_Institution :
Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran
Abstract :
In this paper, an analytical model for the threshold voltage of FinFETs is proposed. The model is derived by approximating the 2D Poissonpsilas equation by a 1-D equation. Also, in the model, a coefficient denoted by H, is used to modify the estimated value of the gate capacitance. To assess the accuracy of the model, the model results are compared by those of the numerical simulations of the device. The comparison reveals a high accuracy for the proposed model.
Keywords :
MOSFET; Poisson equation; 2D Poisson equation; FinFET; gate capacitance; threshold voltage; Analytical models; Capacitance; FinFETs; MOSFETs; Nanoelectronics; Numerical simulation; Permittivity; Poisson equations; Silicon on insulator technology; Threshold voltage;
Conference_Titel :
Computer and Communication Engineering, 2008. ICCCE 2008. International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-1691-2
Electronic_ISBN :
978-1-4244-1692-9
DOI :
10.1109/ICCCE.2008.4580707
