DocumentCode
2324943
Title
An analytical model for threshold voltage of FinFETs
Author
Afzal, B. ; Rostami, M. ; Samaadi, M. ; Afzali-Kusha, A.
Author_Institution
Nanoelectron. Center of Excellence, Univ. of Tehran, Tehran
fYear
2008
fDate
13-15 May 2008
Firstpage
760
Lastpage
763
Abstract
In this paper, an analytical model for the threshold voltage of FinFETs is proposed. The model is derived by approximating the 2D Poissonpsilas equation by a 1-D equation. Also, in the model, a coefficient denoted by H, is used to modify the estimated value of the gate capacitance. To assess the accuracy of the model, the model results are compared by those of the numerical simulations of the device. The comparison reveals a high accuracy for the proposed model.
Keywords
MOSFET; Poisson equation; 2D Poisson equation; FinFET; gate capacitance; threshold voltage; Analytical models; Capacitance; FinFETs; MOSFETs; Nanoelectronics; Numerical simulation; Permittivity; Poisson equations; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer and Communication Engineering, 2008. ICCCE 2008. International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-1691-2
Electronic_ISBN
978-1-4244-1692-9
Type
conf
DOI
10.1109/ICCCE.2008.4580707
Filename
4580707
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