Title :
Thermoelectrical properties of superlattices
Author :
Melnichuk, S.V. ; Kosyachenko, S.V. ; Vozny, M.V.
Author_Institution :
Inst. of Thermoelectr., Chernivtsy
Abstract :
Recent investigations show that thermoelectric properties of superlattices, where electronic density of states is two-dimensional, may be greatly improved. In our report the calculations of thermoelectric properties of Si/Ge superlattices are proposed. Superlattice band structure was calculated in the frame of the tight-binding model (sp3s*). The obtained band structure allows us to calculate the electronic density of states. The Fermi level was determined from the neutrality equation. Kinetic coefficients were calculated within the relaxation time approximation. The calculated figure of merit of a superlattice is compared to that of Si-Ge alloy
Keywords :
Fermi level; band structure; carrier relaxation time; electronic density of states; elemental semiconductors; germanium; semiconductor superlattices; silicon; thermoelectricity; tight-binding calculations; 2D electronic density of states; Fermi level; Si-Ge; Si-Ge alloy; Si/Ge; SiGe; band structure; figure of merit; kinetic coefficients; neutrality equation; relaxation time approximation; superlattices; thermoelectric properties; tight-binding model; Atomic layer deposition; Crystals; Electrons; Equations; Kinetic theory; Lattices; Semiconductor process modeling; Semiconductor superlattices; Temperature; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location :
Dresden
Print_ISBN :
0-7803-4057-4
DOI :
10.1109/ICT.1997.667180
