MEMS applied backward-wave oscillator for 0.1 THz

Author

Baik, Chan-Wook ; Kim, Sun Il ; Hong, Seogwoo ; Lee, SangHun ; Srivastava, Anurag ; So, Jin-Kyu ; Park, Gun-Sik ; Kim, Jong-Min

Author_Institution

Samsung Adv. Inst. of Technol., Yongin, South Korea

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

1

Abstract

The microfabrication of a backward-wave oscillator is presented for a compact, high-power source in the terahertz range of electromagnetic spectrum. One of micro-electro-mechanical systems (MEMS) technologies, a deep reactive ion etching (DRIE), was employed and achieved the fully 3-dimensional accuracy of coupled cavities operating at 0.1 THz. The prediction and measurement on the scattering parameter of the interaction circuit showed a good agreement.

Keywords

backward wave oscillators; microfabrication; micromechanical devices; sputter etching; terahertz wave devices; MEMS technology; backward-wave oscillator; coupled cavity; deep reactive ion etching; electromagnetic spectrum; frequency 0.1 THz; microelectro-mechanical system; microfabrication; scattering parameter measurement; terahertz range; Coupling circuits; Dry etching; Electromagnetic measurements; Electromagnetic spectrum; Extraterrestrial measurements; Gold; Micromechanical devices; Oscillators; Space technology; Submillimeter wave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325545

Filename

5325545