Title :
Class-F power amplifier with high power added efficiency for 900MHz
Author :
Al-Ajmi, M. ; Al-Blushi, A. ; Al-Mamari, R. ; Nadir, Zeeshan ; Bait-Suwailam, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Sultan Qaboos Univ., Muscat, Oman
Abstract :
This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.
Keywords :
UHF power amplifiers; cellular radio; gallium arsenide; power HEMT; radio transmitters; GSM transmitters; GaAs; circuit design; class-F power amplifier; efficiency 95.5 percent; frequency 900 MHz; high efficiency class-F type circuit; high power added efficiency; pHEMT transistor; Harmonic analysis; Linearity; Power amplifiers; Power generation; Power harmonic filters; Radio frequency; Transistors; Class-F; GSM Frequencies; Power amplifier; high Efficiency. GaAs;
Conference_Titel :
Electronic Design (ICED), 2014 2nd International Conference on
Conference_Location :
Penang
DOI :
10.1109/ICED.2014.7015786
