Gate leakage current of a double gate N-MOS On (111) silicon - A quantum mechanical study

A simple and efficient method to calculate the gate leakage current of an ultra-thin body double gate MOS structure on (111) crystallographic orientation, incorporating quantum mechanical effects, is presented. Using an accurate and numerically efficient fully coupled one dimensional Schrodinger-Poisson self-consistent solver, the gate leakage current have been calculated and presented for different values of dielectric and silicon body thickness and orientation of silicon surface. All the simulated results have been found to be in good agreement with reported experimental data.