Title :
3D temperature distribution of SiC MESFET using Green´s function
Author :
Islam, M.S. ; Akanda, Rakibul Karim
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
A three-dimensional (3D) analytical model is derived in this paper to predict the temperature distribution in silicon carbide (SiC) MESFET. The analytical results are almost similar to the simulation results obtained by Atlas. The model describes the influence of the structural parameter and input power on temperature distribution. In some previous papers, analytical solution was obtained by the customary variable-separation method where a long calculation is needed. But by using Green´s function, we get a model that is many times faster and even hand calculation is possible. The results can be used for optimization of the thermal design of SiC MESFET.
Keywords :
Green´s function methods; Schottky gate field effect transistors; optimisation; semiconductor device models; silicon compounds; temperature distribution; wide band gap semiconductors; 3D temperature distribution; Green´s function; MESFET; SiC; customary variable-separation method; thermal design; Atlas; Green´s function; SiC MESFET; variable-separation method;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700541
