3D temperature distribution of SiC MESFET using Green´s function

Author

Islam, M.S. ; Akanda, Rakibul Karim

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2010

fDate

18-20 Dec. 2010

Firstpage

13

Lastpage

16

Abstract

A three-dimensional (3D) analytical model is derived in this paper to predict the temperature distribution in silicon carbide (SiC) MESFET. The analytical results are almost similar to the simulation results obtained by Atlas. The model describes the influence of the structural parameter and input power on temperature distribution. In some previous papers, analytical solution was obtained by the customary variable-separation method where a long calculation is needed. But by using Green´s function, we get a model that is many times faster and even hand calculation is possible. The results can be used for optimization of the thermal design of SiC MESFET.

Keywords

Green´s function methods; Schottky gate field effect transistors; optimisation; semiconductor device models; silicon compounds; temperature distribution; wide band gap semiconductors; 3D temperature distribution; Green´s function; MESFET; SiC; customary variable-separation method; thermal design; Atlas; Green´s function; SiC MESFET; variable-separation method;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2010 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-6277-3

Type

conf

DOI

10.1109/ICELCE.2010.5700541

Filename

5700541