Title :
Fabrication of device structure for terahertz quantum cascade laser based on III-nitride semiconductors
Author :
Terashima, W. ; Ying, L. ; Hirayama, H.
Author_Institution :
Terahertz Quantum Device Lab., RIKEN, Sendai, Japan
Abstract :
We fabricated device structure for GaN/AlGaN terahertz quantum cascade laser (THz-QCL). In the growth of QC structure by radio-frequency molecular beam epitaxy, we successfully grew fine periodic QC structure by performing shutter control for the amount of material supply strictly. In the device processing for III-nitride semiconductors, we successfully fabricated surface plasmon waveguide typed THz-QCL device. Further, we performed current injection for the fabricated device. We for the first time observed the radiation from THz-QCL based on III-Nitride semiconductors at 7 K in pulse mode.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; quantum cascade lasers; submillimetre wave lasers; surface plasmons; wide band gap semiconductors; GaN-AlGaN; radio-frequency molecular beam epitaxy; surface plasmon waveguide; terahertz quantum cascade laser; Aluminum gallium nitride; Gallium nitride; Molecular beam epitaxial growth; Optical device fabrication; Optical materials; Periodic structures; Quantum cascade lasers; Radio control; Radio frequency; Semiconductor materials;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325573
