Title :
Improved parameter extraction of small-sized FETs for low-power applications
Author :
Lenk, F. ; Doerner, R.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
In low-power applications FETs with small gate width are required. For such devices common extraction methods fail. In particular, extracting source inductance and drain pad capacitance using "cold"-FET measurements is no longer possible. We present an improved method that allows reliable extraction of extrinsic elements for small-sized FETs.
Keywords :
Capacitance; Equivalent circuits; Field effect transistors; Inductance; Microwave field effect transistors; Millimetre wave field effect transistors; Semiconductor device models; drain pad capacitance; extrinsic elements extraction; low-power applications; parameter extraction; small gate width; small-sized FETs; source inductance; Capacitance measurement; Equivalent circuits; FETs; Impedance measurement; Inductance; Network topology; Parameter extraction; Parasitic capacitance; Particle measurements; Sensor systems;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862233
