Title :
A new simplified and reliable HEMT modelling approach using pinched cold FET S-parameters
Author :
Mwema, W.N. ; Kompa, G.
Author_Institution :
Fachgebiet Hochfrequenztech., Kassel Univ., Germany
Abstract :
An automatic technique for determining starting values for the parasitic elements of a distributed 18 element FET directly from pinched cold FET S-parameters is described. Optimization results using this technique are presented and show that the starting vector is very close to the solution. The approach is discussed on the basis of synthesized and measured S-parameter data.
Keywords :
Capacitance; Equivalent circuits; High electron mobility transistors; Inductance; Microwave field effect transistors; S-parameters; Semiconductor device models; HEMT modelling; automatic technique; distributed 18 element FET; optimization; parasitic element; pinch-off parameters; pinched cold FET S-parameters; starting vector; Admittance; Capacitance; Electrical resistance measurement; Equations; FETs; Frequency; HEMTs; Multidimensional systems; Parameter extraction; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862234
