DocumentCode :
2325907
Title :
A new analytical and broadband method for determining the HBT small-signal model parameters
Author :
Bousnina, S. ; Mandeville, P. ; Kouki, Ammar B. ; Surridge, R. ; Ghannouchi, F.M.
Author_Institution :
Ecole Polytech., Montreal, Que., Canada
Volume :
3
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
1397
Abstract :
An original, rigorous and accurate method for the direct extraction of HBT small-signal model parameters is proposed. The main advantage of this method is that a unique and physical-meaningful set of intrinsic parameters is extracted from the measured S-parameters for the whole frequency range of operation. The extraction procedure uses a set of closed form expressions derived without any approximation. In this sense, the extraction method is more accurate and robust in comparison with those employing special test structures or global numerical optimization techniques. Experimental validation on a HBT device with a 2/spl times/25 /spl mu/m emitter was carried out, and excellent results were obtained up to 30 GHz. The calculated data-fitting residual error over 1-30 GHz was less then 2%.
Keywords :
Equivalent circuits; Heterojunction bipolar transistors; Microwave bipolar transistors; S-parameters; Semiconductor device models; 1 to 30 GHz; HBT small-signal model parameters; S-parameters; analytical method; broadband method; closed form expressions; direct extraction; parameters extraction; Circuit simulation; Equations; Equivalent circuits; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Optical wavelength conversion; Parameter extraction; Robustness; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.862235
Filename :
862235
Link To Document :
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