An active pulsed rf and pulsed dc load-pull system for the characterization of power transistors used in coherent radar and communication systems

Author

Arnaud, C. ; Barataud, D. ; Nebus, J.-M. ; Teyssier, J.-P. ; Villotte, J.-P. ; Floriot, D.

Author_Institution

IRCOM, Limoges, France

Volume

3

fYear

2000

fDate

11-16 June 2000

Firstpage

1463

Abstract

This paper presents a new automated and vector corrected active load-pull system allowing the characterization of microwave power transistors under coherent pulsed RF and pulsed DC operating conditions. Measurements of an S band-Class C-8 Watt silicon bipolar amplifier are shown and demonstrate the ability of our system to accurately characterize power variations and carrier phase shift within the pulse. Source and load-pull measurements of an 8/spl times/30 /spl mu/m/sup 2/ GaInP/GaAs HBT (Thomson LCR) are also reported for different pulse widths.

Keywords

III-V semiconductors; bipolar transistor circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave circuits; microwave power transistors; power bipolar transistors; radar equipment; 8 W; Class C; GaInP-GaAs; HBT; S band; bipolar amplifier; carrier phase shift; coherent communication systems; coherent radar systems; microwave power transistors; power transistor characterization; power variations; pulse widths; pulsed dc load-pull system; vector corrected active load-pull system; Gain measurement; Phase measurement; Power amplifiers; Power measurement; Power transistors; Pulse amplifiers; Pulse measurements; Radio frequency; Radiofrequency amplifiers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.862250

Filename

862250