Fine tuning of THz emission line in Si lasers

Author

Zhukavin, Roman Kh ; Kovalevsky, K.A. ; Tsyplenkov, V.V. ; Shastin, V.N. ; Pavlov, S.G. ; Böttger, U. ; Hübers, H.W. ; Riemann, H. ; Abrosimov, N.V. ; Notzel, N.

Author_Institution

Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

The effect of uniaxial stress along [100] on stimulated emission spectrum from bismuth donor in silicon has been investigated. The output emission intensity has a non-monotonic behavior with minimum at 0.1 kbar, further increase with maximum at 0.4 kbar and ceases for stress higher than 0.7 kbar. The zero stress lines 2p+ rarr ls(T₂: Gamma₈), 2rho+ rarr ls(E) are changed by the 2p+ rarr ls(T₂: Gamma₇) for stress higher than 0.2 kbar. The frequency of such transition is tuned by uniaxial deformation from 212 cm^-1 for zero stress till 208 cm^-1 for stress higher than 0.3 kbar.

Keywords

bismuth; semiconductor lasers; silicon; stimulated emission; terahertz wave devices; terahertz wave generation; Si lasers; Si:Bi; THz emission line; bismuth donor; fine tuning; nonmonotonic behavior; output emission intensity; stimulated emission spectrum; transition frequency; uniaxial deformation; uniaxial stress; zero stress lines; Decision support systems; Laser tuning; Virtual reality;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325619

Filename

5325619