Millimeter wave broadband frequency tripler in GaAs/InGaP HBT technology

Author

Beaulieu, C.

Author_Institution

Nortel Networks, Ottawa, Ont., Canada

Volume

3

fYear

2000

fDate

11-16 June 2000

Firstpage

1581

Abstract

A millimeter wave broadband MMIC frequency tripler has been designed using GaAs/InGaP HBT technology. The tripler operates in a near class-B regime for low conversion loss and good efficiency. At +15 dBm input power, the tripler exhibits a conversion loss of less than 5 dB from 25.5 GHz to 31.5 GHz. Fundamental frequency suppression is better than 35 dB while the second harmonic is suppressed by more than 20 dB across most of the operating band.

Keywords

Bipolar MIMIC; Bipolar MMIC; Frequency multipliers; Gallium arsenide; Gallium compounds; Heterojunction bipolar transistors; III-V semiconductors; Indium compounds; Integrated circuit design; MMIC frequency convertors; Millimetre wave frequency convertors; 25.5 to 31.5 GHz; 5 dB; GaAs-InGaP; GaAs/InGaP HBT technology; MM-wave broadband frequency tripler; MMIC frequency tripler; fundamental frequency suppression; low conversion loss; near class-B regime; second harmonic suppression; Circuit simulation; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance matching; MMICs; Millimeter wave technology; Power amplifiers; Power generation; Power harmonic filters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.862278

Filename

862278