DocumentCode
2326743
Title
A physically based compact model for FinFETs on-resistance incorporating quantum mechanical effects
Author
Akanda, Md Rakibul Karim ; Islam, Raisul ; Khosru, Quazi D M
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2010
fDate
18-20 Dec. 2010
Firstpage
203
Lastpage
205
Abstract
On-resistance is a term that occurs during high frequency switching. In this paper, the analysis of the on-resistance of FinFETs including quantum mechanical effect (QME), contact resistance, accumulation layer resistance, drift resistance and channel resistance is presented. Specific on resistance of FinFET is considered to be the series equivalent of contact resistance, drift resistance, accumulation layer resistance, channel resistance etc. Quantum mechanical effect changes the threshold voltage and thus change on current. So, this effect is considered in resistance modeling.
Keywords
MOSFET; accumulation layers; contact resistance; quantum theory; FinFET; ON resistance; accumulation layer resistance; channel resistance; contact resistance; drift resistance; high frequency switching; quantum mechanical effect; FinFET; contact resistance; drift resistance; quantum mechanical effect(QME);
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4244-6277-3
Type
conf
DOI
10.1109/ICELCE.2010.5700663
Filename
5700663
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