Using MEMS in Class D amplifiers for standard GSM carrier

Author

Al-Khateeb, Khalid A S ; Harun, Nik M Yusri bin M

Author_Institution

Electr. & Comput. Eng. Dept., Int. Islamic Univ. Malaysia, Kuala Lumpur

fYear

2008

fDate

13-15 May 2008

Firstpage

1284

Lastpage

1289

Abstract

The equivalent circuit of MEMS capacitive switches can be used to analyze a class D power amplifier, operated by a power supply of 3.7V. The system is intended for GSM audio frequency to produce an output power of (0.5-1.0) mW at a load output impedance of (8-10) Q. The system gain must be greater than 33 dBm and the estimated loss (0.5-1) dB. A model for the power amplifier using MEMS passive devices has been developed. The model helps to determine the design parameters that affect the performance and reliability of the system that operate an RF transceiver. The optimization of the amplifier and the MEMS capacitor switching devices and how to integrate the system, will also be discussed. The design and the equivalent circuit were simulated using a PSpice model.

Keywords

SPICE; amplifiers; cellular radio; microswitches; transceivers; GSM audio frequency; MEMS capacitive switch; MEMS passive device; PSpice model; RF transceiver; class D amplifiers; power 0.5 mW to 1.0 mW; standard GSM; voltage 3.7 V; Equivalent circuits; Frequency estimation; GSM; Micromechanical devices; Power amplifiers; Power supplies; Power system modeling; Radiofrequency amplifiers; Switches; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Computer and Communication Engineering, 2008. ICCCE 2008. International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-1691-2

Electronic_ISBN

978-1-4244-1692-9

Type

conf

DOI

10.1109/ICCCE.2008.4580811

Filename

4580811