Title :
Analysis of a GaAs/AlGaAs electrooptic modulator for high-speed communications
Author :
Zareen, Ismat ; Amin, Mahbub ; Alam, M. Shah ; Ahmed, Tahsin ; Karim, M. Ataul ; Rahman, Ananny
Author_Institution :
Dept. of Electr. & Electron. Eng., Ahsanullah Univ. of Sci. & Technol. (AUST), Dhaka, Bangladesh
Abstract :
An analysis of a GaAs/AlGaAs electrooptic intensity modulator is carried out by using the finite element method. The microwave properties, e.g., the effective index, the characteristic impedance, and the frequency dependent attenuations are calculated using quasi-TEM analysis. The 3-dB optical bandwidth is estimated and it is shown that microwave losses in the dielectric material is an important factor in determining the bandwidth of the modulator. Next, to carry out the optical analysis, electrooptic effect is considered and optical mode fields and half-wavelength voltage length product is calculated using a vectorial finite element method. The results are compared with the published results and very good agreements have been found.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; finite element analysis; gallium arsenide; high-speed optical techniques; microwave photonics; optical communication equipment; optical losses; refractive index; GaAs-AlGaAs; dielectric material; effective index; electrooptic intensity modulator; frequency dependent attenuations; half-wavelength voltage length product; high-speed communication; impedance characteristics; microwave losses; microwave properties; quasi-TEM analysis; vectorial finite element method; 3-dB optical bandwidth; Electrooptic modulator; half-wave voltage length product; microwave analysis; optical analysis;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700666
