Title :
Modeling of temperature effect on threshold voltage of ballistic Ge tunneling FET
Author :
Siddiqui, Saima Afroz ; Zubair, Ahmad ; Shoron, Omor Faruk ; Khosru, Quazi D M
Author_Institution :
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
The effect of temperature and scaling of gate length on the threshold voltage of double gate Ge tunneling FET has been studied. The threshold voltage has been determined from transconductance rather than constant current method. In the 10 nm to 50 nm range scaling has almost no effect on threshold voltage. However, threshold voltage is function of temperature in the range of 250-500 K. Besides, a simple model for threshold voltage incorporating the temperature effect has been developed for ballistic Ge tunneling FET based on the simulated results.
Keywords :
elemental semiconductors; field effect transistors; germanium; semiconductor device models; Ge; ballistic tunneling FET; constant current method; gate length scaling; size 10 nm to 50 nm; temperature 250 K to 500 K; temperature effect modelling; threshold voltage; Tunnel FET; band to band tunneling; gate threshold voltage; scaling; temperature; transconductance;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700671
