A 240 W push-pull GaAs power FET for W-CDMA base stations

Author

Inoue, K. ; Ebihara, K. ; Haematsu, H. ; Igarashi, T. ; Takahashi, H. ; Fukaya, J.

Author_Institution

Fujitsu Quantum Devices Ltd., Yamanashi, Japan

Volume

3

fYear

2000

fDate

11-16 June 2000

Firstpage

1719

Abstract

A 240 W power FET for cellular base stations of a next generation system has been developed. The FET consists of four 60 W chips, which were fabricated by using our high efficiency and low distortion device technique, combined in a push-pull configuration. The developed FET achieved 240 W (53.8 dBm) output power, 11.2 dB linear gain and 54% power-added efficiency at 2.14 GHz. This is the highest output power device using GaAs FET technology.

Keywords

Cellular radio; Code division multiple access; Gallium arsenide; III-V semiconductors; Power field effect transistors; UHF field effect transistors; UHF power amplifiers; 11.2 dB; 2.14 GHz; 240 W; 54 percent; GaAs; W-CDMA base stations; cellular base stations; linear gain; low distortion device technique; next generation system; output power; power-added efficiency; push-pull power FET; Base stations; FETs; Gain; Gallium arsenide; Multiaccess communication; Power generation; Radio frequency; Radiofrequency amplifiers; Temperature dependence; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest. 2000 IEEE MTT-S International

Conference_Location

Boston, MA, USA

ISSN

0149-645X

Print_ISBN

0-7803-5687-X

Type

conf

DOI

10.1109/MWSYM.2000.862310

Filename

862310