Title :
Design of resonant tunneling barriers for reduction in the dark current in quantum dots-in-a-well infrared photodetectors
Author :
Barve, A.V. ; Shao, J. ; Sharma, Y. ; Sankalp, K. ; Lee, S.J. ; Noh, S.K. ; Krishna, S.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
Abstract :
Reduction in the dark current and wavelength selective extraction of the photocarriers in a quantum dots in a well structure using resonant tunneling barriers has been demonstrated. The passband of the two resonant tunneling barriers has been designed to extract longwave and midwave peaks respectively. Substantial reduction in the dark currents and increase in the detectivity has been obtained.
Keywords :
infrared detectors; photodetectors; resonant tunnelling; semiconductor quantum dots; semiconductor quantum wells; dark current; quantum dots-in-a-well infrared photodetectors; resonant tunneling barriers; wavelength selective extraction; Dark current; Eigenvalues and eigenfunctions; Gallium arsenide; Materials science and technology; Passband; Photoconductivity; Photodetectors; Quantum dots; Resonant tunneling devices; Stationary state;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325678
