Title :
GaN-AlGaN high electron mobility transistors for multiple biomolecule detection such as photosystem I and human MIG
Author :
Tulip, Fahmida S. ; Mostafa, Shaikh ; Islam, Syed Kamrul ; Eteshola, Edward ; Eliza, Sazia Afreen ; Lee, Inkyu ; Greenbaum, E. ; Evans, Barbara R.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA
Abstract :
This paper demonstrates a novel way of using a single type of high electron mobility transistor (HEMT) device for detecting two kinds of biomolecules (Photosystem I and recombinant human monokine induced by interferon gamma, MIG). MIG was successfully detected in 150 mM concentration of phosphate buffer solution (PBS). Floating gate configuration used for biomolecule detection eliminates the need of external gate voltage and represents purely the effect of biomolecules immobilization and binding events on the gate surface.
Keywords :
III-V semiconductors; aluminium compounds; biomedical electronics; biosensors; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN-AlGaN; HEMT device; binding events; biomolecules immobilization; floating gate configuration; high electron mobility transistor; human MIG; human monokine; interferon gamma; multiple biomolecule detection; photosystem I; HEMT; Human MIG; PS I; floating gate; high concentration PBS;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700690