Silicon substrate low-temperature-grown GaAs terahertz photomixers

Author

Beck, Alexandre ; Blary, Karine ; Peytavit, Emilien ; Akalin, Tahsin ; Lampin, Jean-françois ; Yang, Chun ; Hindle, Francis ; Mouret, Gael

Author_Institution

Inst. d´´Electron. de Microelectron. et de Nanotechnol., Univ. de Lille 1, Villeneuve-d´´Ascq, France

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0.78 mum shows that the overall performance is comparable to standard GaAs substrate photomixers at frequencies up to 2 THz.

Keywords

III-V semiconductors; epitaxial layers; gallium arsenide; molecular beam epitaxial growth; photodetectors; terahertz wave detectors; GaAs; Si; epitaxial layer transfer technique; frequency 2 THz; low temperature grown terahertz photomixers; terahertz device; Bonding; Chemicals; Etching; Fabrication; Frequency; Gallium arsenide; Lithography; Optical sensors; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325684

Filename

5325684