Silicon substrate low-temperature-grown GaAs terahertz photomixers

We have developed an epitaxial layer transfer technique for THz devices. Here we report the fabrication and the characterization of a THz photomixer on a silicon substrate. The active part of the photomixer is a low-temperature-grown GaAs mesa which has been transferred and layer bonded onto a Si substrate. The preliminary measurement of the THz signal generated in a photomixing configuration at 0.78 mum shows that the overall performance is comparable to standard GaAs substrate photomixers at frequencies up to 2 THz.