MBE growth and characterization of dilute InNSb film

Author

Zhang, Y.H. ; Chen, P.P. ; Yin, H. ; Li, T.X. ; Lu, W.

Author_Institution

Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

A series of dilute InNSb films with different N composition were prepared at various growth conditions by RF-MBE. The film samples were characterized by Atom force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and room temperature Raman scattering spectroscopy, the measurements indicated that the InNSb films are of high crystalline quality and most of the N atoms are at the substituted Sb sites.

Keywords

III-V semiconductors; Raman spectra; X-ray diffraction; atomic force microscopy; indium compounds; molecular beam epitaxial growth; plasma materials processing; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; AFM; HRXRD; InNSb; RF-MBE growth; Raman scattering spectra; atom force microscopy; dilute semiconductor film; high resolution X-ray diffraction; radio frequency plasma-assisted molecular beam epitaxial growth; temperature 293 K to 298 K; Atomic force microscopy; Atomic measurements; Crystallization; Force measurement; Infrared detectors; Molecular beam epitaxial growth; Plasma temperature; Raman scattering; Spectroscopy; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325698

Filename

5325698