Title :
Enhancement of THz emission from inas films using si lens coupler
Author :
Que, Christopher T. ; Edamura, Tadataka ; Nakajima, Makoto ; Tani, Masahiko ; Hangyo, Masanori
Author_Institution :
Res. Center for the Dev. of Far-Infrared Region, Univ. of Fukui, Fukui, Japan
Abstract :
Enhancement of the pulsed terahertz radiation generated from an InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached on a 520 nm thick InAs film that was fabricated on a Si substrate. A factor of 7.5 enhancement in the THz wave amplitude from the InAs film with the lens coupler as compared to the bare InAs has been observed. The reason for the enhancement is attributed to the increase in the collimation of the radiated THz wave propagating through the lens coupler to air.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; narrow band gap semiconductors; semiconductor thin films; terahertz wave generation; InAs; MBE; Si; THz emission enhancement; THz wave amplitude; femtosecond laser; hemispherical lens; lens coupler; narrow-gap semiconductor; pulsed terahertz radiation generation; radiated THz wave propagation; size 520 nm; thin films; Laser excitation; Lenses; Optical buffering; Optical coupling; Optical films; Optical reflection; Semiconductor films; Substrates; Transistors; Ultrafast optics;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325715
