DocumentCode :
2327521
Title :
Optoelectronic mixing in a self oscillating InP/GaInAs photo-heterojunction bipolar transistor
Author :
Lasri, J. ; Bilenca, A. ; Eisenstein, G. ; Ritter, D. ; Orenstein, M.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Volume :
3
fYear :
2000
fDate :
11-16 June 2000
Firstpage :
1825
Abstract :
We describe optoelectronic mixing in self-oscillating multi frequency InP/InGaAs photo-heterojunction bipolar transistors. Base-band analog or digital data carried by optical signal impinging on the base is imprinted simultaneously on all RF spectral lines.
Keywords :
Gallium arsenide; Heterojunction bipolar transistors; Indium compounds; Microwave photonics; Mixers (circuits); Optical communication equipment; Optical fibre communication; Phototransistors; InP-InGaAs; RF spectral lines; baseband analog data; baseband digital data; multi frequency bipolar transistors; optoelectronic mixing; self oscillating photo-heterojunction bipolar transistor; Fiber nonlinear optics; Heterojunction bipolar transistors; Indium phosphide; Nonlinear optics; Optical filters; Optical frequency conversion; Optical mixing; Optical modulation; Power harmonic filters; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-5687-X
Type :
conf
DOI :
10.1109/MWSYM.2000.862335
Filename :
862335
Link To Document :
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