Ag-metal bonding conditions for low-loss double-metal waveguide for terahertz quantum cascade laser

Author

Ying, L. ; Ikeda, N.H. ; Hirayama, H.

Author_Institution

Riken Sendai, Sendai, Japan

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

The Ag-metal bonding conditions for the double-metal waveguide (DMW) of terahertz quantum cascade lasers (THz-QCLs) were investigated. GaAs wafers were bonded together with Ag-metal layers by applying high-pressure and heat. We achieved successful Ag bonding at 400degC with an applied pressure of 38.5 kg/cm² for 30 min in N₂ ambient. A thin Ti adhesion layer was inserted between Ag and GaAs. The Ti layer (thickness ges10 nm) was, in addition, found to act as a barrier preventing Ag diffusion into GaAs at temperatures below 400degC.

Keywords

III-V semiconductors; gallium arsenide; optical waveguides; quantum cascade lasers; terahertz wave devices; waveguide lasers; Ag; Ag-metal bonding; GaAs; Ti; diffusion; low-loss double-metal waveguide; temperature 400 degC; terahertz quantum cascade laser; thin Ti adhesion layer; time 30 min; Dielectric losses; Gallium arsenide; Quantum cascade lasers; Refractive index; Scanning electron microscopy; Semiconductor waveguides; Substrates; Temperature; Thermal conductivity; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325718

Filename

5325718