Raman Spectra of the carbon films by pulsed laser deposition using C60 target

Author

Ashrafuzzaman, A.N.M. ; Zubair, Ahmed ; Mominuzzaman, S.M. ; Kishi, Naoki ; Soga, Tetsuo ; Jimbo, Takashi

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol. (BUET), Dhaka, Bangladesh

fYear

2010

fDate

18-20 Dec. 2010

Firstpage

415

Lastpage

418

Abstract

Carbon films were grown on single crystal silicon substrate by XeCl excimer pulsed laser deposition (PLD) and fullerene (C₆₀) is used as a target. A detailed Raman analysis is presented here to investigate the structural change of the film and hence the result is compared with those of the films produced from graphite and camphor (C₁₀H₁₆O) targets deposited in the similar conditions. Raman analysis of the films obtained from C₆₀ target indicates 3 distinct peaks located at 1357.4 cm^-1, 1529.3 cm^-1, 1592.1 cm^-1 named D peak, F (fullerene) peak and G peak respectively. High energetic pulsed laser causes polymeric semiconducting film which retains crystalline graphite structure. Such improved quality of film proves that C₆₀ can be used as a better target material instead of graphite or camphor for semiconducting/optoelectronic applications.

Keywords

Raman spectra; carbon; pulsed laser deposition; thin films; C; D peak; Raman spectra; camphor targets; carbon films; crystalline graphite structure; polymeric semiconducting film; pulsed laser deposition; C60; Carbon Film; Polymerized Fullerene; Pulse Laser Deposition; irradiation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2010 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-6277-3

Type

conf

DOI

10.1109/ICELCE.2010.5700717

Filename

5700717