Terahertz Raman laser from silicon doped by arsenic

Author

Hübers, H.W. ; Pavlov, S.G. ; Böttger, U. ; Hovenier, J.N. ; Abrosimov, N.V. ; Riemann, H. ; Zhukavin, R.Kh. ; Shastin, V.N. ; Redlich, B. ; Van der Meer, A. F G

Author_Institution

Inst. of Planetary Res., German Aerosp. Center (DLR), Berlin, Germany

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

3

Abstract

Stimulated Raman emission at frequencies ranging from 4.8 THz to 5.1 THz and from 5.9 THz to 6.5 THz has been realized by optical excitation of arsenic donors in silicon. The Stokes shift is 5.42 THz, which is equal to the Raman-active donor electronic transition between the 1s(A₁) ground state and the excited 1s(E) state. In addition, intracenter donor lasing has been observed when pumping on the dipole-forbidden 1s(A₁)rarr2s transition.

Keywords

arsenic; elemental semiconductors; silicon; stimulated Raman scattering; terahertz wave spectra; Raman-active donor electronic transition; Si:As; Stokes shift; dipole-forbidden 1s(A₁)rarr2s transition; frequency 4.8 THz to 5.1 THz; frequency 5.9 THz to 6.5 THz; ground state; intracenter donor lasing; optical excitation; stimulated Raman emission; terahertz Raman laser; Free electron lasers; Frequency; Lattices; Light scattering; Optical pumping; Optical scattering; Physics; Pump lasers; Raman scattering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325734

Filename

5325734