Title :
GaN Gunn diodes for THz signal generation
Author :
Alekseev, E. ; Pavlidis, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The frequency and power capability of GaN-based Gunn diodes are evaluated using transient hydrodynamic simulations. GaN Gunn oscillators with 2 /spl mu/m-thick GaN Gunn diodes are predicted to have a fundamental frequency of 148-162 GHz and power density of >10/sup 5/ W/cm/sup 2/. Due to their high frequency and power characteristics, applications of these devices are envisaged for THz signal generation.
Keywords :
Gallium compounds; Gunn diodes; Gunn oscillators; III-V semiconductors; Millimetre wave oscillators; Semiconductor device models; Submillimetre wave generation; Wide band gap semiconductors; 148 to 162 GHz; 2 mum; GaN; GaN Gunn diodes; GaN Gunn oscillators; THz signal generation; frequency capability; fundamental frequency; power capability; power density; transient hydrodynamic simulations; Electrons; Frequency; Gallium arsenide; Gallium nitride; Gunn devices; High power microwave generation; Microwave devices; Power generation; Semiconductor diodes; Signal generators;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862354
