Title :
New methodology for microwave/millimeter-wave MMIC development
Author :
Kamogawa, K. ; Nishikawa, K. ; Toyoda, I. ; Tokumitsu, M. ; Hirano, M. ; Nakagawa, T. ; Muraguchi, M.
Author_Institution :
NTT Network Innovation Labs., Kanagawa, Japan
Abstract :
A new MMIC development methodology that combines suitable devices with the 3D/multilayer interconnection process is presented. This approach allows the designer to choose the process so as to realize high performance and low cost. The integration of 0.15-/spl mu/m pHEMT and 3D interconnection technologies is demonstrated. The slight changes of FET parameter with polyimide layer use can be easily incorporated into MMIC design and development.
Keywords :
Field effect MIMIC; Field effect MMIC; HEMT integrated circuits; Integrated circuit design; Integrated circuit interconnections; 0.15 micron; 3D interconnection technologies; 3D/multilayer interconnection process; FET parameter; MMIC design; MMIC development; cost; millimeter-wave ICs; pHEMT; performance; polyimide layer; Design automation; Fabrication; Foundries; Integrated circuit interconnections; MMICs; Microwave devices; Microwave theory and techniques; Millimeter wave technology; Nonhomogeneous media; PHEMTs;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862356
