Title :
Si ICL based Si3N4 passivation on InAlAs surface of InP-HEMT by RPECVD system
Author :
Sung-Soon, Choi ; Kwan-Hoon, Lee ; Byeong-Seok, Song
Author_Institution :
Korea Electron. Technol. Inst., Seongnam, South Korea
Abstract :
As a promising device for high speed communication, HEMT has got many intention. But, it is long way to field-application of HEMT because of instability of the device. Especially, surface of InP-HEMT1 (InAlAs) is very unstable and bandgap of InP is narrower than conventional GaAs-HEMT, so kink effect is very severe consequently. Si ICL(Inter Control Layer) based SiN passivation2 for GaAs-HEMT has been suggested before, and I applied it to the InP-HEMT passivation process. It showed that Si ICL based passivation was more effective for reducing surface state.
Keywords :
III-V semiconductors; energy gap; high electron mobility transistors; indium compounds; passivation; plasma CVD; surface states; InAlAs; InP; InP-HEMT; RPECVD system; Si ICL based Si3N4 passivation; high electron mobility transistor; intercontrol layer; kink effect; surface state; HEMTs; Indium compounds; Indium phosphide; Passivation; Photonic band gap; Silicon compounds;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325750
