Title :
Influence of output impedance on power added efficiency of Si-bipolar power transistors
Author :
van Rijs, F. ; Dekker, R. ; Visser, H.A. ; Huizing, H.G.A. ; Hartskeerl, D. ; Magnee, P.H.C. ; Dondero, R.
Author_Institution :
Philips Dicrete Semicond., Nijmegen, Netherlands
Abstract :
The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically. We found that the transistor with low output capacitance operates in "inverse class AB", which facilitates high efficiencies. FE as high as 77% at 1.8 GHz with 3.5 V supply voltage have been obtained.
Keywords :
Capacitance; Electric impedance; Elemental semiconductors; Power bipolar transistors; Semiconductor device measurement; Silicon; UHF bipolar transistors; 1.8 GHz; 3.5 V; 77 percent; LV RF bipolar power transistors; PAE; Si; Si bipolar power transistors; cellular applications; high efficiencies; inverse class AB; low output capacitance; low voltage power transistors; output impedance; power added efficiency; Bipolar transistors; Capacitance; GSM; Impedance; Power amplifiers; Power generation; Power measurement; Power transistors; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-5687-X
DOI :
10.1109/MWSYM.2000.862364
