Title :
High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength
Author :
Ortsiefer, M. ; Shau, R. ; Böhm, G. ; Köhler, F. ; Rosskopf, J. ; Steinle, G. ; Degen, C. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany
Abstract :
Buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSELs) for 1.55 μm wavelength were fabricated on InP with significantly improved stationary and dynamic lasing characteristics such as CW output powers >7 mW (at 20°C), maximum CW operating temperature >110°C, threshold currents and voltages below 1 mA and 0.9 V, respectively, and modulation bandwidths exceeding 2.5 Gb/s.
Keywords :
indium compounds; optical communication equipment; semiconductor lasers; surface emitting lasers; 1.55 micron; 2.5 Gbit/s; 20 degC; CW output power; InP; VCSEL; buried tunnel junction; lasing characteristics; modulation bandwidth; operating temperature; threshold current; threshold voltage; vertical-cavity surface-emitting lasers; Bandwidth; Indium phosphide; Power generation; Power lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Communication, 2001. ECOC '01. 27th European Conference on
Print_ISBN :
0-7803-6705-7
DOI :
10.1109/ECOC.2001.989041
