High-temperature 2.5 Gb/s vertical-cavity surface-emitting lasers at 1.55 μm wavelength

Author

Ortsiefer, M. ; Shau, R. ; Böhm, G. ; Köhler, F. ; Rosskopf, J. ; Steinle, G. ; Degen, C. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Technische Univ. Munchen, Garching, Germany

Volume

6

fYear

2001

fDate

2001

Firstpage

44

Abstract

Buried tunnel junction (BTJ) vertical-cavity surface-emitting lasers (VCSELs) for 1.55 μm wavelength were fabricated on InP with significantly improved stationary and dynamic lasing characteristics such as CW output powers >7 mW (at 20°C), maximum CW operating temperature >110°C, threshold currents and voltages below 1 mA and 0.9 V, respectively, and modulation bandwidths exceeding 2.5 Gb/s.

Keywords

indium compounds; optical communication equipment; semiconductor lasers; surface emitting lasers; 1.55 micron; 2.5 Gbit/s; 20 degC; CW output power; InP; VCSEL; buried tunnel junction; lasing characteristics; modulation bandwidth; operating temperature; threshold current; threshold voltage; vertical-cavity surface-emitting lasers; Bandwidth; Indium phosphide; Power generation; Power lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communication, 2001. ECOC '01. 27th European Conference on

Print_ISBN

0-7803-6705-7

Type

conf

DOI

10.1109/ECOC.2001.989041

Filename

989041