Title :
Effects of hetero-related bulk-traps on photoresponse for long-wavelength HgCdTe infrared photodiode
Author :
Hu, W.D. ; Chen, X.S. ; Yin, F. ; Ye, Z.H. ; Lin, C. ; Hu, X.N. ; Li, Z.F. ; Lu, W.
Author_Institution :
Nat. Lab. for Infrared Phys., Chinese Acad. of Sci., Shanghai, China
Abstract :
Effects of hetero-related bulk traps on photoresponse for long-wavelength Hg1-xCdxTe infrared photodiodes have been numerically studied. The model involves a generalized approach, taking into account absorption coefficient, trap-assisted and band-to-band tunneling recombination mechanism, and bulk traps distributions associated with misfit dislocations present in the GaAs-substrate/Hg1-xCdxTe hetero-structure. The characteristic x-dependent material parameters, used in the simulations, such as donor concentration, trap density and level, and minority lifetime, are extracted by the simultaneous-mode nonlinear fitting procedure.
Keywords :
II-VI semiconductors; III-V semiconductors; absorption coefficients; cadmium compounds; carrier lifetime; dislocations; electron traps; gallium arsenide; hole traps; infrared detectors; mercury compounds; photodetectors; photodiodes; semiconductor heterojunctions; tunnelling; GaAs-Hg1-xCdxTe; absorption coefficient; band-to-band tunneling recombination; bulk trap distribution; donor concentration; hetero-related bulk traps; long-wavelength infrared photodiodes; minority lifetime; misfit dislocations; photoresponse; simultaneous-mode nonlinear fitting procedure; trap density; trap level; Absorption; Doping; Electron traps; Gallium arsenide; Passivation; Photodiodes; Physics; Poisson equations; Substrates; Tunneling;
Conference_Titel :
Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5416-7
Electronic_ISBN :
978-1-4244-5417-4
DOI :
10.1109/ICIMW.2009.5325757
