Author :
Paoletti, R. ; Agresti, M. ; Burns, G. ; Berry, G. ; Bertone, D. ; Charles, P. ; Crump, P. ; Davies, A. ; Fang, R.Y. ; Ghin, R. ; Gotta, P. ; Holm, M. ; Kompocholis, C. ; Magnetti, G. ; Massa, J. ; Meneghini, G. ; Rossi, G. ; Ryder, P. ; Taylor, A. ; Vale
Abstract :
Combining an optimised active region based on InGaAsP strained MQW (multi quantum well) and a low parasitic lateral confinement region, we fabricated 10 Gb directly modulated uncooled DFB lasers which represent, we believe, the state of art. Our DFB lasers work up to 100°C (substrate base temperature) with eye diagram perfectly open (showing an extinction ratio > 5 dB) and with bit error rate over 10 km without an error floor. Up to 90°C our DFBs show threshold current as low as 29 mA. optical power as high as 13 mW and meet perfectly a 10 Gb scaled Ethernet mask with extinction ratio > 6 dB.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; local area networks; optical communication equipment; optical fibre LAN; optical modulation; quantum well lasers; 10 Gbit/s; 100 C; 13 mW; 29 mA; Ethernet mask; InGaAsP; InGaAsP strained MQW; bit error rate; directly modulated InGaAsP DFB lasers; multi quantum well; optical power; optimised active region; parasitic lateral confinement region; threshold current; uncooled Ethernet applications; Art; Ethernet networks; Indium phosphide; Metropolitan area networks; Optical fiber communication; Optical fiber networks; Optical modulation; Power lasers; Stimulated emission; Temperature;
