Title :
Influence of anomalous dispertion layer thickness and position on optical absorption and quantum efficiency in the resonant-cavity detector
Author :
Gryshchenko, S.V. ; Dyomin, A.A. ; Lysak, V.V. ; Sukhoivanov, I.A.
Author_Institution :
Kharkov Nat. Univ. of Radio Electron., Kharkov
fDate :
June 29 2008-July 2 2008
Abstract :
We present a theoretical analysis on the optical absorption and quantum efficiency (QE) of a resonant cavity enhanced InGaAs/GaAs P-i-n photodetector (RCE PD). The QE is calculated by using transfer matrix method that includes the structural parameters of the RCE PD and takes into account the standing wave effect and a energy conservation law is offered. Using anomalous dispersion (AD) mirror flattopped QE spectrum has been obtained. The influence of the thickness and position of AD layer on the optical absorption and QE are shown and design with a maximum QE of 92.5% and 6 nm spectral flattop are presented.
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; indium compounds; light absorption; mirrors; optical dispersion; optical materials; optical multilayers; optical resonators; photodetectors; InGaAs-GaAs; anomalous dispersion mirror; anomalous dispertion layer thickness; energy conservation law; optical absorption; p-i-n photodetector; quantum efficiency; resonant-cavity detector; spectral flattop; standing wave effect; transfer matrix method; Absorption; Energy conservation; Gallium arsenide; Indium gallium arsenide; Mirrors; PIN photodiodes; Photodetectors; Quantum mechanics; Resonance; Structural engineering;
Conference_Titel :
Mathematical Methods in Electromagnetic Theory, 2008. MMET 2008. 12th International Conference on
Conference_Location :
Odesa
Print_ISBN :
978-1-4244-2284-5
DOI :
10.1109/MMET.2008.4580914
