Graphene tunneling transit-time device with electrically induced p-i-n junction

We propose a graphene tunneling transit-time device based on a heterostructure with a lateral p-i-n junction electrically induced in the graphene layer, develop the device model, and calculate its ac characteristics. Using the developed device model, it is shown that the ballistic transit of electrons and holes generated due to interband tunneling in the i-section results in the negative ac conductance in the terahertz frequency range. The device can serve as an active element of terahertz oscillators.