Title :
Ku band voltage controlled oscillator on SiGe
Author :
Torres, Jorge Alves ; Freire, J. Costa
Author_Institution :
Inst. de Telecomun. & Inst. Mil. dos Pupilos do Exercito, Lisbon
fDate :
Nov. 30 2008-Dec. 3 2008
Abstract :
In this paper the design and test of a monolithic VCO implemented in a 0.25 mum SiGe technology is presented. The oscillator frequency is changing from 12 till 16 GHz when the control voltage changes from 0 to 2 V. The output power is -10 dBm @ 50 Omega. The total power consumption is 40 mW but 70% is to supply the output buffer amplifier. The predicted VCO phase noise, on the 12 GHz to 16 GHz frequency range is changing from -103 dBc/Hz to -82 dBc/Hz at an offset frequency of 1 MHz.
Keywords :
Ge-Si alloys; buffer circuits; circuit noise; microwave amplifiers; microwave oscillators; semiconductor materials; voltage-controlled oscillators; Si-Ge; frequency 12 GHz to 16 GHz; voltage 0 V to 2 V; voltage controlled oscillator; Energy consumption; Frequency; Germanium silicon alloys; Phase noise; Power amplifiers; Power generation; Silicon germanium; Testing; Voltage control; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Conference_Location :
Macao
Print_ISBN :
978-1-4244-2341-5
Electronic_ISBN :
978-1-4244-2342-2
DOI :
10.1109/APCCAS.2008.4746286
