Title :
Function by defects at the atomic scale — new concepts for non-volatile memories
Author :
Waser, Rainer ; Wuttig, Matthias
Author_Institution :
IWE 2, RWTH Aachen Univ., Aachen, Germany
Abstract :
A survey of non-volatile, highly scalable memory devices which utilize dedicated resistive switching phenomena in nanoscale chalcogenide-based memory cells is presented. The classification of the memory effects, the understanding of the underlying mechanisms, and the crucial role of structural defects are outlined.
Keywords :
chalcogenide glasses; nanotechnology; noncrystalline defects; phase change materials; random-access storage; switching; function-by-defects; memory effects; nanoscale chalcogenide memory cell; nonvolatile memories; resistive switching; structural defects; Chemical technology; Electric resistance; Information technology; Metal-insulator structures; Nanoscale devices; Nonvolatile memory; Random access memory; Read-write memory; Reflectivity; Voltage;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325927
