DocumentCode
2328891
Title
Nanowire electronics
Author
Appenzeller, Joerg
Author_Institution
Sch. of Electr. & Comput. Eng. & Birck, Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
73
Lastpage
75
Abstract
Nanowires are an ideal choice for electronic applications. The underlying reason is that they offer a number of intrinsic properties that make them uniquely suited for low-power applications that require a highly linear device response. In this article we discuss the advantages of nanowires in particular for RF applications emphasizing the critical role of the quantum capacitance for the device operation. We argue that the one-dimensional character of a nanowire is the key enabler for device operation in the quantum capacitance limit and the main reason for a vastly different switching behavior in nanowire field-effect transistors.
Keywords
field effect transistors; low-power electronics; nanoelectronics; nanowires; RF applications; highly linear device response; low-power electronic applications; nanowire electronics; nanowire field-effect transistor; quantum capacitance limitation; Application software; Ballistic transport; FETs; MOSFETs; Nanoscale devices; Particle scattering; Photonic band gap; Quantum capacitance; Radio frequency; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location
Athens
ISSN
1930-8833
Print_ISBN
978-1-4244-4354-3
Type
conf
DOI
10.1109/ESSCIRC.2009.5325929
Filename
5325929
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