• DocumentCode
    2328891
  • Title

    Nanowire electronics

  • Author

    Appenzeller, Joerg

  • Author_Institution
    Sch. of Electr. & Comput. Eng. & Birck, Purdue Univ., West Lafayette, IN, USA
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    73
  • Lastpage
    75
  • Abstract
    Nanowires are an ideal choice for electronic applications. The underlying reason is that they offer a number of intrinsic properties that make them uniquely suited for low-power applications that require a highly linear device response. In this article we discuss the advantages of nanowires in particular for RF applications emphasizing the critical role of the quantum capacitance for the device operation. We argue that the one-dimensional character of a nanowire is the key enabler for device operation in the quantum capacitance limit and the main reason for a vastly different switching behavior in nanowire field-effect transistors.
  • Keywords
    field effect transistors; low-power electronics; nanoelectronics; nanowires; RF applications; highly linear device response; low-power electronic applications; nanowire electronics; nanowire field-effect transistor; quantum capacitance limitation; Application software; Ballistic transport; FETs; MOSFETs; Nanoscale devices; Particle scattering; Photonic band gap; Quantum capacitance; Radio frequency; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC, 2009. ESSCIRC '09. Proceedings of
  • Conference_Location
    Athens
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4244-4354-3
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2009.5325929
  • Filename
    5325929