Title :
Amorphous diamond like carbon films as a new material for electron devices
Author :
Klibanov, L. ; Alaluf, M. ; Seidman, A. ; Croitoru, N.
Author_Institution :
Fac. of Eng., Tel Aviv Univ., Israel
Abstract :
Thin films of a:DLC were deposited by plasma decomposition of hydrocarbon gas, such as methane (CH/sub 4/). The plasma was produced using an r.f. generator (13.56 MHz) at room temperature. The a:DLC structure was optically studied in the visible light. The optical measurements show an optical band gap of about 0.96 eV and refractive index (n) of 1.7-2.2 in visible light range. Microhardness test shows high hardness of about 4700 kg/mm/sup 2/ for pure a:DLC, but the microhardness of the films is being reduced with nitrogen concentration in the deposition process. The electrical resistivity of the films is reduced by 3 orders of magnitude with nitrogen incorporation. Photoconductivity measurements were performed on an Al-a:DLC-Cu sandwich structure. A photocurrent signal of 100 times higher than the dark current was measured under He-Ne laser incident light (2.5 mW) at -130C substrate temperature.
Keywords :
aluminium; amorphous semiconductors; carbon; copper; elemental semiconductors; energy gap; metal-semiconductor-metal structures; microhardness; photoconductivity; plasma CVD; refractive index; semiconductor thin films; -130 degC; 0.96 eV; 13.56 MHz; 2.5 mW; Al-C-Cu; RF generator; amorphous diamond like carbon films; electrical resistivity; microhardness test; optical band gap; photoconductivity measurements; photocurrent signal; plasma decomposition; refractive index; Amorphous materials; Diamond-like carbon; Electrons; Optical films; Optical refraction; Optical variables control; Organic materials; Plasma materials processing; Plasma measurements; Plasma temperature;
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1995., Eighteenth Convention of
Conference_Location :
Tel Aviv, Israel
Print_ISBN :
0-7803-2498-6
DOI :
10.1109/EEIS.1995.513812
