DocumentCode :
2328999
Title :
Single-Wafer Processing And Real-Time Process Control For Semiconductor Integrated Circuit Manufacturing
Author :
Bowling, A.
Author_Institution :
Texas Instruments Incorporated
fYear :
1994
fDate :
21-22 June 1994
Firstpage :
31
Lastpage :
33
Abstract :
For 300 mm and larger diameter silicon wafer processing, it is clear that single-wafer processing will play a dominant role. In addition to current use of single-wafer processing for lithography, plasma etch, and metal deposition, recent research has shown that single-wafer processing will even displace most batch furnace processes and wafersurface preparation processes. In addition, the implementation of in-situ sensors will allow the use of real-time process control to improve process reproducibility and equipment utilization.
Keywords :
Chemical vapor deposition; Etching; Plasma applications; Plasma chemistry; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Process control; Rapid thermal processing; Reproducibility of results;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location :
Tokyo, Japan
Type :
conf
DOI :
10.1109/ISSM.1994.729417
Filename :
729417
Link To Document :
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