Title :
A double gate MOS structure for solar photo-voltaic application
Author :
Siddiqui, Mahmudur Rahman ; Khan, Md Ryyan ; Khan, Md Rezwan
Author_Institution :
Dept. of EEE, East West Univ., Dhaka, Bangladesh
Abstract :
A new double gate MOS structure that uses intrinsic Si as the active material is proposed in this paper for photo-voltaic application. In this device recombination of optically generated charge carriers will be low as the active region is intrinsic in nature and the carriers will travel at high velocity under the effect of external electric field. The open circuit voltage (VOC), short circuit current (IVSC) and efficiency of the device is calculated and compared with those of a typical p-n junction solar cell. It is found that the proposed device shows higher efficiency and VOC compared to the typical p-n junction solar cells.
Keywords :
MIS structures; elemental semiconductors; p-n junctions; photovoltaic cells; short-circuit currents; solar cells; MOS structure; Si; intrinsic Si; open circuit voltage; p-n junction solar cells; short circuit current; solar photovoltaic cell; Intrinsic Si; MOS structure; Novel Structure; Photo-voltaic cell;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700797
