• DocumentCode
    2329094
  • Title

    A double gate MOS structure for solar photo-voltaic application

  • Author

    Siddiqui, Mahmudur Rahman ; Khan, Md Ryyan ; Khan, Md Rezwan

  • Author_Institution
    Dept. of EEE, East West Univ., Dhaka, Bangladesh
  • fYear
    2010
  • fDate
    18-20 Dec. 2010
  • Firstpage
    734
  • Lastpage
    737
  • Abstract
    A new double gate MOS structure that uses intrinsic Si as the active material is proposed in this paper for photo-voltaic application. In this device recombination of optically generated charge carriers will be low as the active region is intrinsic in nature and the carriers will travel at high velocity under the effect of external electric field. The open circuit voltage (VOC), short circuit current (IVSC) and efficiency of the device is calculated and compared with those of a typical p-n junction solar cell. It is found that the proposed device shows higher efficiency and VOC compared to the typical p-n junction solar cells.
  • Keywords
    MIS structures; elemental semiconductors; p-n junctions; photovoltaic cells; short-circuit currents; solar cells; MOS structure; Si; intrinsic Si; open circuit voltage; p-n junction solar cells; short circuit current; solar photovoltaic cell; Intrinsic Si; MOS structure; Novel Structure; Photo-voltaic cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (ICECE), 2010 International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4244-6277-3
  • Type

    conf

  • DOI
    10.1109/ICELCE.2010.5700797
  • Filename
    5700797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2329094