Title :
High efficiency InxGa1−xN-based quantum well solar cell
Author :
Islam, Md Sherajul ; Iqbal, Md Shahid ; Kaysir, Md Rejvi ; Muhmud, S. M Hassan ; Kabir, A. N M Enamul ; Bhuiyan, Ashraful G. ; Yamamoto, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol. (KUET), Khulna, Bangladesh
Abstract :
This paper reports on the InxGa1-xN-based quantum well (QW) cell as a promising candidate for future high efficiency solar cells. The performances of the proposed quantum well cell are assessed using an analytical model and different device parameters are optimized. A maximum efficiency of 36.49% is obtained with at an optimized band gap of 1.38 eV and at a well depth of 0.2eV. The effects of well number on short circuit current density, open circuit voltage and on the conversion efficiency of the InxGa1-xN-based QW solar cell are also studied. The highest efficiency found for InxGa1-xN-based QW cell for 35 well was 40.2% while for AlxGa1-xAs -based QW solar cell this was 35.55%. Comparison of InxGa1-xN-based QW solar cell and AlxGa1-xAs -based QW solar cell implies that InxGa1-xN-based quantum well cell offers the better efficiency.
Keywords :
III-V semiconductors; indium compounds; quantum well devices; semiconductor quantum wells; solar cells; InGaN; QW solar cell; analytical model; band gap optimization; quantum well solar cell; short-circuit current density; InGaN; QW; band gap; solar cell; well depth;
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
DOI :
10.1109/ICELCE.2010.5700798
