Title :
Oxide Soft Breakdown : From device modeling to small circuit simulation
Author :
Gerrer, L. ; Ghibaudo, G. ; Ribes, G.
Author_Institution :
IMEP-LAHC, Minatec-INPG, Grenoble, France
Abstract :
After several experiments of the impact of soft-breakdown on MOS device´s operation and parameters, we use the current partitioning equations to express the channel debiasing and compare its influence to the leakage current. A 3D TCAD model is set up and directly used in small circuit´s mixed mode simulations to evaluate the SBD impact on inverters and SRAM processes. Finally an analytical model of the degradation effects is proposed, to be integrated to compact models.
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit modelling; leakage currents; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); 3D TCAD model; MOS device operation; SBD impact; SRAM process; circuit simulation; current partitioning equations; device modeling; inverter; leakage current; oxide soft breakdown; Analytical models; Breakdown voltage; Circuit simulation; Electric breakdown; Gate leakage; Inverters; Leakage current; Random access memory; Stress; Thickness measurement;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325941
